advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 700v fast switching characteristic r ds(on) 1.3 simple drive requirement i d 6a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 drain current, v gs @ 10v a i d @t c =100 drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg storage temperature range t j operating junction temperature range thermal data symbol parameter value units rthj-c maximum thermal resistance, junction-case 3.4 /w rthj-a maximum thermal resistance, junction-ambient 6 5 /w data & specifications subject to change without not ice 24 1 + 30 6 18 -55 to 150 -55 to 150 201501162 6 37 3.7 ap2761i-h-hf parameter rating 700 halogen-free product g d s g d s to-220cfm(i) ap2761 series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220cfm package is widely preferred for all commercia l- industrial through hole applications. the mold compound pr ovides a high isolation voltage capability and low thermal resista nce between the tab and the external heat-sink. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 700 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =3a - - 1.3 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =4a - 9.4 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge i d =4a - 67 - nc q gs gate-source charge v ds =480v - 9 - nc q gd gate-drain ("miller") charge v gs =10v - 26 - nc t d(on) turn-on delay time v dd =300v - 13 - ns t r rise time i d =4a - 8 - ns t d(off) turn-off delay time r g =3.3 - 62 - ns t f fall time v gs =10v - 14 - ns c iss input capacitance v gs =0v - 2750 - pf c oss output capacitance v ds =25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =6a, v gs =0v - - 1.5 v trr reverse recovery time i s =4a, v gs =0v, - 430 - ns qrr reverse recovery charge di/dt=100a/s - 6.1 - c notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=1mh , r g =25 , i as =6a. 3.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. ap2761i-h-hf 2 .
ap2761i-h-hf fig 1. typical output characteristic s fig 2. typical output characteristic s fig 3. normalized bv dss v.s. junction fig 4. normalized on-r esistance temperature v.s. junction tempe rature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss 0 4 8 12 16 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 0 2 4 6 8 10 0 4 8 12 16 20 24 28 32 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =3a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j = 25 o c t j = 150 o c 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) .
ap2761i-h-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12 . gate charge waveform 4 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 4 8 12 16 0 20 40 60 80 100 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =4a v ds =480v 0 1000 2000 3000 4000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.01 0.1 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on) .
marking information 5 ap2761i-h-hf part number package code date code (ywwsss) y last digit of the year ww week sss sequence 2761i ywwsss h option .
|
